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SILICON CMOS COMPATIBLE TRANSITION METAL OXIDE TECHNOLOGY FOR BOOSTING HIGHLY INTEGRATED PHOTONIC DEVICES WITH DISRUPTIVE PERFORMANCE

The SITOGA project will address the integration of transition metal oxide (TMO) materials in the silicon photonics platform for the first time in a European-scale research initiative. SITOGA will focus on two disruptive TMO materials, barium titanate (BaTiO3) and vanadium oxide (VO2), for enabling breakthrough electro-optical functionalities. The integration of such innovative materials will offer enhanced capabilities to the silicon photonics platform by offering unprecedented performance in terms of operation speed, power consumption, losses and footprint. Access to novel functionalities, such as electro-optical non-volatility (bistability) performance, will also be explored to make them available for the first time in the silicon platform. The developed technology will be useful for a wide-range of applications, especially in the telecom and datacom markets but also open opportunities in other high impact markets such as space.

Project title: Silicon CMOS compatible transition metal oxide technology for boosting highly integrated photonic devices with disruptive performance
Project acronym: SITOGA
Project number: 619456
Start date: 01/12/2013
Duration: 36 months
Call identifier: FP7-ICT-2013-11


European Comission FP7
European Project funded under 7th FWP

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